VL9213 SOLID STATE DEVICE MODELING AND SIMULATION ME VLSI DESIGN SYLLABUS

VL 9213 SOLID STATE DEVICE MODELING AND SIMULATION

UNIT I MOSFET DEVICE PHYSICS  

MOSFET capacitor, Basic operation, Basic modeling,Advanced MOSFET modeling, RF modeling of MOS transistors, Equivalent circuit representation of MOS transistor, High frequency behavior of MOS transistor and A.C small signal modeling, model parameter extraction, modeling parasitic BJT, Resistors,Capacitors, Inductors.

UNIT II NOISE MODELING  

Noise sources in MOSFET, Flicker noise modeling, Thermal noise modeling, model for accurate distortion analysis, nonlinearities in CMOS devices and modeling, calculation of distortion in analog CMOS circuits

UNIT III BSIM4 MOSFET MODELING  

Gate dielectric model, Enhanced model for effective DC and AC channel length and width, Threshold voltage model, Channel charge model, mobility model, Source/drain resistance model, I-V model, gate tunneling current model, substrate current models, Capacitance models, High speed model, RF model, noise model, junction diode models, Layout-dependent parasitics model.

UNIT IV OTHER MOSFET MODELS  

The EKV model, model features, long channel drain current model, modeling second order effects of the drain current, modeling of charge storage effects, Nonquasi- static modeling, noise model temperature effects, MOS model  , MOSAI model)

UNIT V MODELLING OF PROCESS VARIATION AND QUALITY ASSURANCE

Influence of process variation, modeling of device mismatch for Analog/RF

Applications, Benchmark circuits for quality assurance, Automation of the tests

REFERENCES:

1. Trond Ytterdal, Yuhua Cheng and Tor A. FjeldlyWayne Wolf, “Device Modeling for

Analog and RF CMOS Circuit Design”, John Wiley & Sons Ltd.